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Other articles related with "InGaN-based light-emitting diode"：
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47802 |
Jiang-Dong Gao(高江东), Jian-Li Zhang(张建立), Zhi-Jue Quan(全知觉), Jun-Lin Liu(刘军林), Feng-Yi Jiang(江风益) |
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Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection |
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Chin. Phys. B
2020 Vol.29 (4): 47802-047802
[Abstract]
(573)
[HTML 1 KB]
[PDF 901 KB]
(144)
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